sot-89-3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., ltd sot-89-3l plastic-encapsulate transistors PXT2907A transistor (pnp) features z switching and linear amplification z high current and low voltage z complement to pxt2222a marking:p2f maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.01 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.01 a v ce =-10v, i c =-0.1ma 75 v ce =-10v, i c =-1ma 100 v ce =-10v, i c =-10ma 100 v ce =-10v, i c =-150ma 100 300 dc current gain h fe v ce =-10v, i c =-500ma 50 i c =-500ma,i b =-50ma -1.6 v collector-emitter saturation voltage v ce(sat) i c =-150ma,i b =-15ma -0.4 v i c =-500ma,i b =-50ma -2.6 v base-emitter saturation voltage v be(sat) i c =-150ma,i b =-15ma -1.3 v delay time t d 12 ns rise time t r 30 ns storage time t s 300 ns fall time t f v cc =-30v, i c =-150ma, i b1 =- i b2 =-15ma 65 ns transition frequency f t v ce =-10v,i c =-20ma, f=100mhz 200 mhz symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -600 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 d , nov ,2015
-200 -400 -600 -800 -1000 -0 -100 -200 -300 -400 -500 -600 -0.1 -1 -10 1 10 100 -0 -20 -40 -60 -80 -100 0 100 200 300 400 500 -10 -100 10 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -1 -10 -100 -200 -400 -600 -800 -1000 -1 -10 -100 -0 -200 -400 -600 -800 -0 -2 -4 -6 -8 -10 -12 -14 -0 -50 -100 -150 -200 -250 -300 -350 -400 v ce =-10v t a =25 t a =100 o c base-emitter voltage v be (mv) collector current i c (ma) i c ?? v be -20 f=1mhz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =-10v t a =25 o c i c f t ?? -600 -600 v ce = -10v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? -600 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat ?? t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 -2ma -1.8ma -1.6ma -1.4ma -1.2ma -1ma -0.8ma -0.6ma -0.4ma i b =-0.2ma collector-emitter voltage v ce (v) collector current i c (ma) static characteristic typical characteristics www.cj-elec.com 2 d , nov ,2015
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 d , nov ,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 d , nov ,2015
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